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The Central Semiconductor Corp. 2N6467 is a PNP power transistor housed in a hermetically sealed TO-66 metal package. It features a collector-emitter voltage (BVCEO) of 100V and a collector-base voltage (BVCBO) of 110V. The device supports a continuous collector current (IC) of 4.0A with a maximum power dissipation (PD) of 40W at 25°C ambient temperature. DC current gain (hFE) ranges from 15 to 150, while saturation voltages are specified as VCE(sat) = 1.2V at IC = 1.5A and VCB(sat) = 1.5V at IC = 1.5A. The transition frequency (fT) is rated at 5.0MHz.
Verify the specific plating configuration required for your assembly process, as options include Tin/Lead or Lead-Free finishes. Confirm that the TO-66 package dimensions match your existing thermal management infrastructure. Ensure compatibility with high-voltage isolation requirements inherent to this component class.
Evaluate the thermal resistance characteristics against your heat sink capabilities to maintain safe operating temperatures. Compare the hFE range and saturation voltages with circuit requirements to ensure adequate drive margins. Consider the hermetic seal benefits if the operating environment presents moisture or corrosive risks.
This component belongs to Central Semiconductor's discrete bipolar transistor portfolio, specifically designed for rugged industrial and military-grade applications. The TO-66 packaging provides superior thermal conductivity and physical durability compared to plastic packages, making it suitable for harsh environments where reliability is critical.
Central Semiconductor has classified the 2N6467 as End of Life (EOL). No direct replacement part number is currently suggested by the manufacturer. Contact engineering support for potential alternate sourcing assistance.