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Product Detailed Parameters
- Description：TRANS NPN 60V 15A TO-220
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：15 A
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：3.5V @ 5A, 15A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 5A, 4V
- Power - Max：1.8 W
- Frequency - Transition：5MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6487G is a high-power NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-220 package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 15 A. The device supports a transition frequency of 5 MHz and dissipates up to 1.8 W of power. DC current gain is specified at a minimum of 20 when tested at 5 A and 4 V. The saturation voltage reaches a maximum of 3.5 V under conditions of 15 A collector current and 5 A base current.
Feature Summary
- High current handling capability with a 15 A continuous collector current rating
- Robust thermal management via the TO-220 through-hole package
- Capable of operating within an extended temperature range from -65°C to 150°C
Applications
- Power switching circuits requiring high current capacity
- Linear regulator output stages
- Motor control driver interfaces
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the part number suffix matches the exact variant required. Ensure compliance with relevant environmental standards such as RoHS or REACH status before integration into final assemblies.
Selection Notes
Select this component for applications demanding high current density in a standard through-hole form factor. Evaluate thermal resistance requirements carefully due to the 1.8 W power dissipation limit. Compare performance metrics against alternative high-current transistors if specific voltage or gain characteristics differ from project constraints.
Part Context
This component belongs to the 2N6487 series of power transistors manufactured by onsemi. It serves as a direct replacement for the obsolete 2N6487 part number, maintaining identical electrical characteristics and physical footprint. The device is categorized under discrete semiconductor products within the single bipolar transistor segment.
Replacement Considerations
The 2N6487G is the confirmed active substitute for the discontinued 2N6487. Both parts share identical pinouts and electrical parameters, ensuring drop-in compatibility without circuit redesign.
