2N6491

Overview

The Harris Corporation 2N6491 is a power PNP bipolar junction transistor constructed from silicon. It features a single-element configuration housed in a TO-220AB flange mount package with plastic/epoxy encapsulation. The device supports a maximum collector current of 15 A and a collector-emitter breakdown voltage of 80 V. It is designed for switching applications with a maximum operating temperature of 150 °C and a maximum power dissipation environment of 75 W.

Feature Summary

• PNP polarity silicon construction
• Flange mount through-hole termination
• Integrated collector case connection

Applications

• Power switching circuits
• High current load control

Procurement Notes

Verify the manufacturer origin, as Harris Semiconductor assets were acquired by Texas Instruments. Confirm the specific suffix (e.g., -6203 or -6226) matches your design requirements. Ensure the TO-220AB package dimensions align with your thermal management strategy. Check for RoHS compliance status if required by your assembly process.

Selection Notes

Select this component for applications requiring high collector current handling up to 15 A. The 80 V rating suits low-to-medium voltage DC switching tasks. The TO-220AB package facilitates direct heatsinking via the collector terminal. Verify that the minimum hFE meets your base drive requirements for saturation.

Part Context

This part belongs to the family of power bipolar transistors manufactured by Harris Corporation. These devices are typically used in industrial and consumer power supplies where robust switching performance is needed. The TO-220AB form factor is standard for through-hole mounting in higher power discrete semiconductor applications.

Replacement Considerations

Check for equivalents from Texas Instruments following the acquisition of Harris Semiconductor assets. Verify pinout compatibility and thermal resistance values when substituting.