2N6497

Overview

The 2N6497 is a high voltage NPN silicon power transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 250 V and a collector-base voltage (VCBO) of 350 V. The device supports a continuous collector current of 5 A with a maximum power dissipation of 80 W at case temperature of 25°C. Key electrical characteristics include a gain bandwidth product (fT) of 5 MHz, an emitter-base voltage (VEBO) of 6 V, and a collector-emitter saturation voltage of 1 V. The thermal resistance from junction to case is 1.56 °C/W.

Feature Summary

• Designed for high voltage amplifier applications using silicon NPN technology
• Capable of handling significant power dissipation up to 80 W under specified conditions
• Provides robust voltage blocking capabilities with 250 V collector-emitter rating

Applications

• High voltage amplifier circuits
• Power switching applications requiring NPN configuration
• Industrial control systems utilizing high voltage transistors

Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified suppliers. Confirm the part number matches the specific datasheet requirements for voltage and current ratings. Check for obsolescence status as the lifecycle may be marked obsolete in some regions. Ensure proper handling procedures are followed due to the power transistor nature of the device.

Selection Notes

Select this component when designing circuits requiring a 250 V NPN power transistor with 5 A current capacity. Consider the 80 W power dissipation limit and the need for adequate heat sinking given the 1.56 °C/W thermal resistance. Evaluate the 5 MHz gain bandwidth product against the required signal frequency. Compare against alternatives if higher voltage ratings such as 300 V or 350 V are needed, which correspond to the 2N6498 and 2N6499 variants respectively.

Part Context

The 2N6497 belongs to a family of high voltage NPN silicon power transistors produced by onsemi and other manufacturers like Central Semiconductor. It is often grouped with similar devices such as the 2N6498 and 2N6499, which offer progressively higher voltage ratings of 300 V and 350 V respectively. These transistors are standardized for use in demanding power electronics environments where reliable high-voltage operation is critical.

Replacement Considerations

Public confirmed substitute part numbers include 2N6498 and 2N6499 from Central Semiconductor Corp., which share similar packaging and pinouts but offer higher voltage ratings of 300 V and 350 V respectively. Verify that the increased voltage ratings do not conflict with circuit design constraints.