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The Harris Corporation 2N6500 is a silicon NPN power transistor designed for high-current and high-speed switching applications. It features a TO-66 (TO-213AA) through-hole package, providing robust thermal management capabilities. Key electrical parameters include a collector-emitter voltage of 90 V, a collector current of 4 A, and a total power dissipation of 35 W. The device exhibits a transition frequency of 60 MHz and a collector capacitance suitable for efficient operation in oscillators, switching regulators, and low-distortion power amplifiers.
Verify the manufacturer origin carefully, as the 2N6500 is a generic JEDEC designation produced by multiple vendors including Microchip Technology, New Jersey Semi-Conductor, and SavantIC. Ensure the specific datasheet matches the required pinout and thermal characteristics for your design. Confirm that the package type aligns with your PCB footprint requirements before finalizing procurement.
Select this component when a PNP equivalent is not strictly required and an NPN topology fits the circuit design. Consider the 90 V rating and 4 A current capacity against your load requirements. Evaluate the TO-66 package size constraints versus thermal needs. Compare transition frequency specifications if high-speed switching is critical to ensure adequate bandwidth for the intended application frequency range.
The 2N6500 belongs to the class of general-purpose silicon NPN power transistors. Historically associated with RCA designs, it is now widely manufactured by various semiconductor companies. It serves as a standard replacement for older epitaxial planar transistors in industrial and consumer electronics requiring moderate power handling and reliable switching performance.
Public confirmed substitute part numbers include 2N3878, 2N3879, 2N5202, and H6500NL. Verify compatibility regarding pin configuration and thermal resistance when substituting.