2N6514

Single Bipolar Transistors Overview

The 2N6514 is a silicon planar epitaxial NPN power transistor manufactured by Microchip Technology. It is housed in a TO-3 metal can package, designed for high-power switching and linear amplifier applications. The device features a collector-emitter voltage rating of 80V and a continuous collector current capacity of 15A. With a maximum power dissipation of 125W at case temperature, it supports operation across an extended junction temperature range from -65°C to +200°C. The component utilizes a hermetically sealed construction suitable for demanding environments.

Single Bipolar Transistors Feature Summary

• Hermetically sealed TO-3 metal can package for robust environmental protection
• High thermal stability supporting junction temperatures up to 200°C
• Capable of handling high continuous collector currents for power switching
• Designed for linear amplifier and switching circuit applications

Single Bipolar Transistors Applications

• High-power linear amplifiers
• Power switching circuits
• Industrial control systems requiring rugged components

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure compliance with project timelines. Confirm that the TO-3 package dimensions match the mechanical design constraints. Check for any lead-free or RoHS status updates if required by regulatory standards. Ensure proper thermal interface material selection given the high power dissipation capabilities.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and thermal resilience are critical. The TO-3 package requires appropriate heatsinking to maintain performance within safe operating areas. Consider the 80V collector-emitter voltage limit relative to the circuit's peak voltages. Evaluate the need for hermetic sealing versus cost-effective alternatives based on the operational environment.

Single Bipolar Transistors Part Context

The 2N6514 belongs to the family of discrete power transistors produced by Microchip Technology. It serves as a replacement for legacy military-grade specifications often associated with the 2N prefix. The device complements other NPN power transistors in the portfolio, offering a balance of current capacity and voltage rating for general-purpose power electronics.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent TO-3 NPN power transistors with matching voltage and current ratings. Verify pinout compatibility before swapping with similar devices from other manufacturers.