2N6515 TIN/LEAD

2N6515 TIN/LEAD

$0.14
  • Description:250V 500MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:74f9f7b42272 Category: Brand:

  
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Product Detailed Parameters

  • Description:250V 500MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):250 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N6515 TIN/LEAD

Overview

The Central Semiconductor Corp 2N6515 TIN/LEAD is a silicon NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage of 40 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 6 V. The device supports a continuous collector current of up to 600 mA and dissipates a maximum power of 625 mW. It exhibits a transition frequency of 200 MHz and operates within a temperature range of -65°C to +150°C.

Feature Summary

  • High-voltage NPN configuration suitable for amplifier and switching applications
  • Robust thermal performance with extended operating temperature limits
  • Standardized through-hole packaging for reliable circuit integration

Applications

  • General-purpose amplification circuits
  • Electronic switching applications
  • Driver stages requiring moderate current handling

Procurement Notes

Verify the specific ordering suffix to confirm lead-free compliance status, as tin/lead variants may differ from RoHS-compliant versions. Confirm availability directly with authorized distributors or the manufacturer, as legacy component stock levels fluctuate. Ensure the selected variant matches the required environmental specifications for the target application before finalizing procurement orders.

Selection Notes

Select this component when a high-voltage NPN transistor is required for through-hole designs. Compare the 40 V collector-emitter breakdown against circuit requirements to ensure adequate safety margins. Evaluate the 600 mA current capacity and 625 mW power dissipation limits relative to thermal management capabilities. Verify that the TO-92-3 footprint aligns with existing board layout constraints.

Part Context

This part belongs to the broader category of discrete bipolar transistors manufactured by Central Semiconductor Corp. The company specializes in providing legacy and standard semiconductor components for industrial and commercial electronics. The 2N6515 serves as a common NPN solution for general-purpose electronic designs requiring reliable switching and amplification characteristics.

Replacement Considerations

Consult official cross-reference documentation to identify equivalent parts discontinued by other manufacturers. Verify pinout compatibility and electrical parameter alignment before substituting. Ensure any replacement maintains the same package type and thermal characteristics.

2N6515 TIN/LEAD2N6515 TIN/LEAD
$0.14
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