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Product Detailed Parameters
- Description：250V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：200MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6515 TRE PBFREE is an NPN silicon high-voltage bipolar junction transistor (BJT) designed for driver and amplifier applications. It features a collector-emitter voltage of 250 V, a continuous collector current of 500 mA, and a power dissipation rating of 625 mW. The device operates within a temperature range of -65°C to +150°C and has a gain bandwidth product of 200 MHz.
Feature Summary
- Complementary silicon high-voltage transistor construction
- Designed for high-voltage driver and amplifier applications
- Through-hole TO-92-3 package configuration
Applications
- High voltage driver circuits
- Amplifier stages
- Switching applications requiring high voltage isolation
Procurement Notes
Verify the specific ordering suffix 'TRE' against the manufacturer's official documentation to confirm reel packaging specifications and lead times. Ensure compliance with RoHS requirements as indicated in the component datasheet. Cross-reference the part number with authorized distributors to confirm availability and production status before procurement.
Selection Notes
Select this component when circuit designs require an NPN transistor capable of handling 250 V collector-emitter voltage and 500 mA current. The 200 MHz gain bandwidth product supports high-frequency operations. Consider the TO-92-3 through-hole package for board layouts requiring standard axial mounting.
Part Context
The 2N6515 belongs to a series of complementary silicon transistors manufactured by Central Semiconductor. It is paired with PNP variants such as the 2N6518 for push-pull configurations. The series is specifically engineered for robust performance in high-voltage environments typical of industrial and consumer electronics.
Replacement Considerations
Official complementary counterparts include the 2N6518 PNP transistor from the same Central Semiconductor series. Verify pinout compatibility and electrical parameters against alternative high-voltage NPN transistors if sourcing from different manufacturers.
