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Product Detailed Parameters
- Description：250V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：200MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N6515 TRE TIN/LEAD is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. Designed for high-voltage applications, it features a collector-emitter voltage rating of 250 V and a continuous collector current capacity of 500 mA. The device offers a transition frequency of 200 MHz and a power dissipation limit of 625 mW. It is housed in a TO-92-3 through-hole package and supplied in tape and reel format with lead or tin finish options.
Feature Summary
- High voltage capability suitable for driver and amplifier circuits
- Complementary PNP counterpart available within the series
- Through-hole mounting configuration for standard PCB integration
Applications
- High voltage driver stages
- Amplifier circuits
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix to confirm the packaging type and terminal finish. The part may be designated as Tape & Reel or Through-Hole Ammo Pack depending on the exact suffix. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the supplier provides official datasheets matching the requested variant.
Selection Notes
Select this component when a high-voltage NPN transistor is required for signal amplification or switching. Compare the 250 V breakdown voltage against circuit requirements. Consider the complementary 2N6518 PNP transistor if push-pull configurations are needed. Evaluate thermal management needs based on the 625 mW dissipation rating.
Part Context
This device belongs to a family of complementary silicon transistors designed for high-voltage operations. The series includes both NPN and PNP variants intended for robust performance in demanding electronic environments. These components are engineered to provide reliable gain and switching characteristics across a wide temperature range.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the source documentation. Verify pinout compatibility and electrical parameter margins before considering alternative manufacturers.
