2N6517 APM PBFREE

$0.33

Description：350V 500MA 625MW TH TRANSISTOR-S
Series：-

SKU:ed1cb487381c Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6517 APM PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 350V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6517 APM PBFREE

Description：350V 500MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：350 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 10V
Power - Max：625 mW
Frequency - Transition：40MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6517 APM PBFREE

2N6517 APM PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6517 APM PBFREE is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose amplifier applications. It features a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V. The device supports a maximum continuous DC collector current of 100 mA with a power dissipation rating of 625 mW at 25°C ambient temperature. It operates within a junction temperature range of -65°C to +150°C and utilizes a TO-92-3 package.

Single Bipolar Transistors Feature Summary

High-voltage capability with 40 V collector-emitter breakdown
Suitable for general-purpose amplification tasks
Robust thermal performance up to 150°C junction temperature

Single Bipolar Transistors Applications

General-purpose signal amplification circuits
Switching applications requiring moderate voltage isolation
Low-power audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'APM' against the manufacturer's official datasheet to confirm packaging configuration, as standard part numbers may vary in reel or bulk specifications. Ensure RoHS compliance documentation matches the PBFREE designation. Cross-reference the exact part number with authorized distributors to confirm availability and lead times prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component when a general-purpose NPN transistor with 40 V voltage ratings and 100 mA current capacity is required. Consider the TO-92-3 through-hole package for prototyping or low-volume production. Evaluate the 625 mW power dissipation limit against thermal management requirements in the final application design.

Single Bipolar Transistors Part Context

This component belongs to the MPS651x series of complementary silicon small-signal transistors manufactured by Central Semiconductor. The MPS6517 represents the PNP counterpart in the complementary pair, while the 2N6517 denotes the standardized NPN equivalent. These devices are engineered for cost-effective general-purpose use in consumer electronics and industrial control systems.