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Product Detailed Parameters
- Description：350V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：350 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：40MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6517 PBFREE is a silicon NPN epitaxial planar transistor housed in a TO-92 plastic package. It features a collector-emitter voltage (VCEO) of 350 V and a maximum collector current (IC) of 0.5 A. The device supports a power dissipation of 625 mW at 25°C, with a minimum DC current gain (hFE) of 15. It operates within a junction temperature range up to 150°C and includes a gain bandwidth product (fT) of 200 MHz. The component is lead-free and RoHS compliant.
Feature Summary
- High voltage capability with 350 V collector-emitter breakdown rating
- Through-hole TO-92 molded plastic construction for reliable mounting
- Lead-free and RoHS compliant manufacturing process
Applications
- High voltage driver circuits
- Amplifier applications requiring high voltage tolerance
- General purpose switching in low power electronics
Procurement Notes
Verify the specific manufacturer designation when sourcing, as Central Semiconductor may supply this part under alternative catalog numbers such as CP310-2N6517. Confirm that the received component matches the TO-92 package style and lead-free specifications required for your assembly process. Ensure compatibility with high-voltage operational requirements before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring robust NPN switching or amplification at elevated voltages. The 350 V rating distinguishes it from standard low-voltage transistors. Consider the 0.5 A current limit and 625 mW thermal dissipation constraints. The TO-92 package suits prototyping and low-volume production where through-hole mounting is preferred over surface-mount alternatives.
Part Context
This transistor belongs to a family of high-voltage small signal bipolar devices. It serves as an NPN counterpart to PNP variants like the 2N6518. Manufactured by Central Semiconductor, it provides a cost-effective solution for discrete high-voltage tasks. The part is widely recognized in industrial and consumer electronics for its reliability in moderate power applications.
Replacement Considerations
The Fairchild/ON Semiconductor 2N6517 is a direct functional equivalent. Other manufacturers producing the 2N6517 specification offer compatible replacements. Verify pinout alignment and electrical parameters match before substituting.
