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Product Detailed Parameters
- Description：TRANS NPN 400V 0.5A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 50mA, 10V
- Power - Max：625 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6517CBU is an NPN high voltage transistor housed in a TO-92 package. It features a collector-emitter breakdown voltage of 350 Vdc and a continuous collector current rating of 500 mAdc. The device supports junction temperatures from -55°C to +150°C with a thermal resistance of 83.3 °C/W junction-to-case. Electrical characteristics include a DC current gain ranging from 20 to 300 at specified currents, a transition frequency up to 200 MHz, and low leakage currents of 50 nAdc.
Feature Summary
- High voltage capability with 350 Vdc collector-emitter breakdown
- Lead-free construction compliant with environmental standards
- Robust thermal performance suitable for discrete mounting applications
Applications
- High voltage switching circuits
- General purpose amplification stages
- Power supply control loops
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration, such as bulk or ammo pack, as indicated in the official datasheet ordering information. Confirm that the component meets lead-free requirements if mandated by assembly specifications. Ensure the TO-92 case style aligns with the intended PCB footprint and mechanical constraints before finalizing procurement decisions.
Selection Notes
Select this component when a high voltage NPN transistor with moderate current handling is required. Compare the 350 Vdc breakdown voltage against circuit peak voltages to ensure adequate margin. Evaluate the thermal resistance and power dissipation limits relative to the expected operating temperature and heat sinking conditions to maintain reliability within the specified junction temperature range.
Part Context
This part belongs to the 2N65xx series of high voltage transistors manufactured by onsemi. The series includes complementary PNP devices like the 2N6520. These components are designed for general-purpose high voltage applications requiring reliable operation in harsh electrical environments while maintaining standard TO-92 mechanical compatibility.
Replacement Considerations
Direct substitutes include other 2N6517 variants from different manufacturers provided they match the 350 Vdc VCEO and TO-92 pinout. Verify electrical parameters such as hFE ranges and switching times to ensure functional equivalence in the specific application circuit.
