2N6517TA

Single Bipolar Transistors Overview

The onsemi 2N6517TA is a single NPN silicon epitaxial planar transistor housed in a TO-92 (TO-226) through-hole package. It features a collector-emitter breakdown voltage of 350 V and a continuous collector current rating of 500 mA. The device supports a maximum power dissipation of 625 mW at 25°C ambient temperature, with an operating junction temperature range extending up to +150°C. Its transition frequency is specified at 200 MHz, and it offers a minimum DC current gain (hFE) of 15 under standard test conditions.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 350 V collector-emitter breakdown rating suitable for demanding switching applications
• Robust thermal performance allowing operation at junction temperatures up to 150°C
• Fast switching characteristics defined by a 200 MHz transition frequency

Single Bipolar Transistors Applications

• High-voltage switching circuits
• General-purpose amplifier stages
• Driver circuits for high-side loads

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TA against the manufacturer's current datasheet to confirm pinout orientation and mechanical dimensions, as legacy part numbers may have variant revisions. Confirm RoHS compliance status directly from the official documentation, as historical manufacturing runs may differ. Ensure the supplier provides traceable origin data consistent with onsemi quality standards before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor requires high voltage blocking capability exceeding standard low-voltage alternatives. The TO-92 package is appropriate for low-power through-hole designs where board space permits larger footprints. Consider the 625 mW power limit carefully; ensure adequate thermal management or derating strategies are implemented if operating near maximum ratings in enclosed environments.

Single Bipolar Transistors Part Context

The 2N6517 series represents a family of medium-power NPN transistors widely used in industrial and consumer electronics. Manufactured by onsemi, these devices utilize epitaxial silicon planar technology to achieve reliable high-voltage performance. The TA suffix typically denotes a specific mechanical lead form or packaging variation within the broader 2N6517 product line distributed by various semiconductor vendors.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other manufacturers' 2N6517 equivalents such as those from Fairchild or Zetex. Verify that substitute parts match the 350 V VCEO, 500 mA IC, and TO-92 package constraints. Check for any differences in hFE grading or transition frequency if circuit timing is critical.