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Product Detailed Parameters
- Description：250V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：40MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6518 APM TIN/LEAD is a PNP epitaxial silicon small-signal bipolar junction transistor designed for high-voltage applications. It features a collector-emitter breakdown voltage of 250 V and a continuous collector current rating of 500 mA. The device operates with a power dissipation capacity of 625 mW in a TO-92-3 through-hole package. Key electrical characteristics include a transition frequency of 40 MHz and a maximum reverse leakage current of 1.0 uA at specified voltages.
Feature Summary
- High voltage capability suitable for driver and amplifier circuits
- Epitaxial silicon construction for reliable performance
- Through-hole mounting configuration for standard PCB integration
Applications
- High voltage driver circuits
- Amplifier stages
- Switching applications requiring moderate current handling
Procurement Notes
Verify the specific suffix 'APM' to confirm the tin/lead plating and ammo pack packaging format. Ensure the procurement order matches the exact manufacturer part number to avoid confusion with lead-free or alternative package variants within the same series. Cross-reference datasheets for thermal resistance values if operating near maximum power limits.
Selection Notes
Select this component when a PNP transistor with 250 V collector-emitter voltage is required. The 500 mA current rating supports moderate load switching. Consider the TO-92-3 package constraints for thermal management. Compare against complementary NPN devices in the 2N6515 series for push-pull configurations.
Part Context
This device belongs to the Central Semiconductor 2N6515–2N6520 series, which comprises complementary silicon transistors. The 2N6518 serves as the PNP counterpart to the NPN 2N6517. These components are engineered specifically for high-voltage driver and amplifier applications, offering matched characteristics within the family for balanced circuit design.
Replacement Considerations
Direct substitutes include other manufacturers' 2N6518 equivalents such as Fairchild or ON Semi versions. Verify that replacement parts maintain the 250 V V(BR)CEO and 500 mA I_C ratings. Check pinout compatibility for TO-92 packages before substitution.
