2N6518BU

Overview

The onsemi 2N6518BU is a PNP epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage of -250 V and a maximum collector current of -500 mA. The device supports a power dissipation of 625 mW at 25°C, with a junction temperature rating up to 150°C. DC current gain ranges from 35 to 300 depending on the collector current level. The component exhibits a current gain bandwidth product between 40 MHz and 200 MHz.

Feature Summary

• High voltage capability with a collector-emitter breakdown voltage of -250 V
• Epitaxial silicon construction for reliable switching performance
• Designed as a complementary pair to the NPN 2N6515 transistor

Applications

• High voltage switching circuits
• Complementary amplifier stages
• General purpose discrete transistor applications

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet indicates Fairchild Semiconductor copyright while the brand is listed as onsemi. Confirm the specific suffix 'BU' matches the required ordering information against the official documentation. Ensure the component status aligns with project requirements regarding availability.

Selection Notes

Select this component when a high-voltage PNP transistor is required in a through-hole TO-92 package. It serves as the direct complement to the 2N6515 NPN transistor. Verify that the -250 V rating meets the circuit's peak voltage demands and that the thermal dissipation characteristics fit the operating environment.

Part Context

This part belongs to the 2N6518 series of high voltage transistors. It is functionally paired with the 2N6515 NPN device to form complementary pairs. The component utilizes an epitaxial silicon process suitable for general-purpose switching and amplification tasks requiring high voltage tolerance.

Replacement Considerations

The 2N6515 is documented as the complementary NPN counterpart. No other specific substitute part numbers are confirmed in the provided source material.