2N6519 APM PBFREE

$0.27

Description：300V 500MA 625MW TH TRANSISTOR-S
Series：-

SKU:c8431af9b42d Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6519 APM PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 300V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6519 APM PBFREE

Description：300V 500MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：45 @ 30mA, 10V
Power - Max：625 mW
Frequency - Transition：200MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6519 APM PBFREE

2N6519 APM PBFREE

Single Bipolar Transistors Overview

The 2N6519 APM PBFREE is a single NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. The device supports a maximum collector-emitter voltage of 80 V and a collector-base voltage of 80 V, with an emitter-base voltage rating of 5 V. It handles a continuous DC collector current of 100 mA and dissipates up to 625 mW of power. The transition frequency is specified at 75 MHz. Operating temperatures range from -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

Single NPN configuration for discrete switching and amplification
Silicon planar construction for reliability
Through-hole mounting via TO-92-3 leaded package

Single Bipolar Transistors Applications

General-purpose low-power switching circuits
Amplifier stages requiring moderate gain
Driver applications within standard temperature ranges

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'APM' against official datasheets to confirm packaging details, as this indicates Ammo Pack distribution. Ensure the component matches the required NPN polarity and TO-92-3 footprint. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation before integration into final assemblies.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN BJT with 80 V breakdown and 100 mA current capacity is required in a compact through-hole form factor. Compare the 75 MHz transition frequency against circuit speed requirements. Evaluate thermal management needs relative to the 625 mW power dissipation limit in the intended enclosure environment.

Single Bipolar Transistors Part Context

This part belongs to the broader family of general-purpose silicon NPN transistors produced by Central Semiconductor. It shares the TO-92-3 mechanical outline common to many small-signal devices but is distinguished by its specific 80 V collector-emitter voltage rating and 100 mA current handling capability, positioning it for mid-range low-power applications.