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2N6519 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 300V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.
The Central Semiconductor Corp 2N6519 TRE TIN/LEAD is a PNP epitaxial silicon small-signal transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage (Vceo) of 300 V and a collector-base voltage (VCBO) of 300 V, with an emitter-base voltage (VEBO) of 6.0 V. The device supports a continuous collector current of 500 mA and dissipates 625 mW of power. It offers a transition frequency (fT) of 200 MHz and operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix 'TRE TIN/LEAD' against the manufacturer's official documentation to ensure compliance with lead-free or tin-lead terminal finish requirements. Confirm that the TO-92-3 package style matches the target PCB footprint. Check for any RoHS exemptions if applicable to the intended application environment.
Select this component when high voltage isolation and moderate current handling are required in a standard through-hole form factor. The 200 MHz fT makes it suitable for frequencies where faster switching is necessary compared to standard low-frequency transistors. Ensure the 625 mW power dissipation rating aligns with the thermal management strategy of the final assembly.
This part belongs to the 2N6519 series of PNP bipolar junction transistors manufactured by Central Semiconductor. It is designed as a general-purpose small-signal device, offering a balance of voltage rating and speed. The TO-92-3 package provides a cost-effective solution for prototyping and production runs requiring reliable through-hole mounting.
The MPSA92 is a documented alternative from the same manufacturer, though it differs in packaging and some electrical characteristics. Verify pinout compatibility and voltage ratings before substitution.
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