Single Bipolar Transistors 2N6519TA product image

2N6519TA

  • Description:TRANS PNP 300V 0.5A TO-92-3
  • Series:-

SKU:a16af73016b9 Category: Brand:

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2N6519TA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 300V 0.5A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6519TA

  • Description:TRANS PNP 300V 0.5A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6519TA

2N6519TA

Single Bipolar Transistors Overview

The 2N6519TA is a PNP epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage of -300V and a maximum collector current of -500mA. The device has a collector power dissipation rating of 625mW at 25°C, derating by 5mW/°C above this temperature. Junction temperature ranges up to 150°C. DC current gain (hFE) varies from 30 to 270 depending on collector current levels between -1mA and -100mA. Switching characteristics include a turn-on time of 200ns and a turn-off time of 3.5ns under specified test conditions.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a -300V collector-emitter breakdown rating suitable for demanding switching applications.
  • Fast switching performance characterized by a short turn-off time of 3.5ns and a current gain bandwidth product up to 200MHz.
  • Robust thermal management allowing operation up to a 150°C junction temperature with defined power dissipation limits.

Single Bipolar Transistors Applications

  • High voltage switching circuits
  • General purpose amplifier stages
  • Complementary pairs with NPN counterparts

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the datasheet indicates Fairchild Semiconductor while the query specifies onsemi. Confirm that the 'TA' suffix corresponds to the standard TO-92 plastic package configuration described in the official documentation. Ensure the component meets RoHS compliance requirements if applicable to your specific manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor with fast switching speeds is required. The -300V rating distinguishes it from lower voltage alternatives. Consider the TO-92 package constraints for thermal dissipation and board space. Verify that the hFE range aligns with the base drive requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the family of high-voltage PNP transistors designed for general-purpose applications. It serves as a complementary device to NPN transistors like the 2N6520. The TO-92 package provides a compact solution for through-hole mounting in consumer and industrial electronics requiring moderate power handling.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly references the 2N6520 for graphical data comparison, indicating a complementary relationship rather than a direct substitute. No other specific replacement part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2N6519?

The maximum collector-emitter voltage (VCEO) is -300V.

How does the DC current gain vary with collector current?

The minimum DC current gain (hFE) ranges from 30 at -1mA to 45 at -10mA and -30mA, dropping to 20 at -100mA.

What is the turn-off time specification?

The turn-off time (tOFF) is specified as 3.5ns under conditions of VCC=-100V, IC=-50mA, and IB1=IB2=10mA.

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