2N6547

Single Bipolar Transistors Overview

The 2N6547 is a high-power NPN silicon transistor featuring multiepitaxial mesa construction in a TO-3 metal case. It provides an 850 V collector-emitter voltage rating and supports up to 15 A continuous collector current with a peak capability of 30 A. The device delivers a total dissipation of 175 W at 25 °C case temperature, with a maximum operating junction temperature of 200 °C. Electrical characteristics include a DC current gain ranging from 6 to 30 at specified currents, a transition frequency up to 24 MHz, and low saturation voltages for efficient switching.

Single Bipolar Transistors Feature Summary

• High voltage capability with 850 V collector-emitter breakdown
• High current handling with 15 A continuous and 30 A peak ratings
• Fast switching speed optimized for power conversion applications
• Robust thermal performance with 175 W dissipation capacity

Single Bipolar Transistors Applications

• Switch mode power supplies
• Flyback single transistor low power converters
• Forward single transistor low power converters

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and electrical tolerances. Confirm that the TO-3 package dimensions match your mechanical constraints. Check for RoHS compliance status if required by your manufacturing standards. Ensure proper thermal interface materials are selected to maintain the specified junction-to-case thermal resistance during operation.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation and significant current handling in a robust metal package. Consider the 850 V rating for mains-connected applications and the 175 W power dissipation for high-load scenarios. Evaluate the thermal management requirements carefully, as the device relies on direct mounting to a heatsink for optimal performance. Verify that the base drive circuitry can supply the necessary peak current for fast switching transitions.

Single Bipolar Transistors Part Context

This transistor belongs to STMicroelectronics' preferred sales type portfolio of high-voltage NPN transistors. It utilizes multiepitaxial mesa technology to achieve high packing density and rugged avalanche characteristics. The TO-3 metal case provides superior thermal conductivity compared to plastic packages, making it suitable for industrial applications where reliability under high stress conditions is critical.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the TO-3 package form factor and meets or exceeds the 850 V and 15 A specifications. Verify compatibility with existing thermal management solutions.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage when the base is open?

The maximum collector-emitter voltage (VCEO) with the base open (IB = 0) is 400 V.

What is the typical storage time for inductive load switching?

The typical storage time (ts) for inductive load switching is 5 μs under specified test conditions.

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj) is 200 °C.