2N6547T1

Single Bipolar Transistors Overview

The JAN2N6547T1 is a military-grade NPN power transistor manufactured by Microsemi. It features a maximum collector current of 15 A and a maximum power dissipation of 175 W. The device supports a minimum DC current gain (hFE) of 12 and operates at temperatures up to 200 °C. It is not RoHS compliant and falls under EAR99 classification.

Single Bipolar Transistors Applications

• High-power switching applications
• Military electronic systems
• Industrial power control circuits

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as this component is associated with Microsemi rather than Microchip Technology. Confirm the specific revision level and military qualification status required for your design. Ensure compliance with export control regulations (EAR99) and non-RoHS material restrictions before procurement.

Single Bipolar Transistors Selection Notes

Select this component for high-voltage, high-current applications requiring robust thermal performance up to 200 °C. Consider the low minimum hFE of 12 when designing base drive circuits. Verify package compatibility and lead availability given its specialized military and industrial nature.

Single Bipolar Transistors Part Context

This part belongs to the 2N6547 series of NPN transistors. It is distinct from the MCP6547 comparator family listed in other search results. The JAN prefix indicates a specific military or aerospace grade variant within the broader transistor lineup.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with standard 2N6547 equivalents if military specifications are not strictly required.