2N6551 PBFREE

$2.45

Description：60V 1A 2W TH TRANSISTOR-BIPOLAR
Series：-

SKU:c30230665b31 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6551 PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 60V 1A 2W TH TRANSISTOR-BIPOLAR. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6551 PBFREE

Description：60V 1A 2W TH TRANSISTOR-BIPOLAR
Series：-
Mfr：Central Semiconductor Corp
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 50mA, 1V
Power - Max：10 W
Frequency - Transition：75MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-202 Long Tab
Supplier Device Package：TO-202
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6551 PBFREE

2N6551 PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6551 PBFREE is an NPN silicon epitaxial planar power transistor designed for high-frequency applications. It features a collector-emitter voltage (Vceo) of 60 V and a maximum continuous collector current of 1 A. The device supports a power dissipation of 2 W and exhibits a gain-bandwidth product (fT) of 375 MHz. Operating temperatures range from -65°C to +150°C junction temperature, housed in a through-hole package.

Single Bipolar Transistors Feature Summary

Epitaxial planar silicon construction for reliable high-frequency performance
High gain-bandwidth product suitable for RF amplification stages
Extended operating temperature range for demanding environments

Single Bipolar Transistors Applications

RF amplifier circuits
General-purpose switching applications
Linear regulation stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure compliance with RoHS requirements and lead time specifications. Confirm that the requested quantity aligns with the manufacturer's standard packaging constraints before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-speed NPN transistor with moderate power handling is required. Ensure the circuit design accommodates the 375 MHz transition frequency and verify thermal management strategies for the 2 W dissipation limit within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to a complementary series of silicon transistors manufactured via the epitaxial planar process. It serves as the NPN counterpart in designs requiring matched or similar characteristics to its PNP companion devices, facilitating balanced circuit topologies.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for the 2N6551/2N6552/2N6553 series to identify direct complementary replacements or functional equivalents with matching electrical parameters.