2N6579

Single Bipolar Transistors Overview

The Microchip Technology 2N6579 is a low-frequency power silicon NPN transistor designed for through-hole mounting in the TO-3 package. It features a collector-emitter breakdown voltage of 350 V and a maximum collector current of 12 A. The device exhibits excellent safe operating area characteristics and high speed performance with low saturation voltage. It operates across a wide temperature range from -65°C to 200°C junction temperature, making it suitable for robust power switching applications requiring high voltage handling.

Single Bipolar Transistors Feature Summary

• Excellent Safe Operating Area
• High Voltage and High Speed Performance
• Low Saturation Voltage

Single Bipolar Transistors Applications

• Off-line power supplies
• Switching amplifiers
• Inverters and converters
• Motor speed control circuits
• Solenoid and relay drivers

Single Bipolar Transistors Procurement Notes

Verify the manufacturer source carefully, as multiple entities list this part number. Confirm the specific datasheet version aligns with your design requirements regarding thermal resistance and pinout configuration. Ensure the TO-3 package compatibility matches your PCB or chassis mounting infrastructure before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and significant current handling are required in a ruggedized package. The wide operating temperature range supports demanding environments. Consider the TO-3 footprint constraints and thermal management needs associated with its physical size compared to smaller surface-mount alternatives.

Single Bipolar Transistors Part Context

This NPN power transistor belongs to the category of general-purpose high-voltage switching devices. It is engineered for reliability in linear and switching modes within power electronics systems. The TO-3 metal can package provides superior heat dissipation capabilities essential for maintaining performance under high load conditions.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other manufacturers' equivalents such as those listed by API Electronics or New Jersey Semi-Conductor Products. Verify electrical parameter alignment, specifically the 350V breakdown and 12A current ratings, to ensure functional interchangeability without redesigning the surrounding circuitry.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 350 V.

Does the 2N6579 support through-hole mounting?

Yes, the device is designed for through-hole mounting using the TO-3 package.