Single Bipolar Transistors 2N657S product image

2N657S

$29.76
  • Description:TRANS NPN 40V TO-5AA
  • Series:-

SKU:5d23ea2f9348 Category: Brand:

  
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2N657S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 40V TO-5AA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N657S

  • Description:TRANS NPN 40V TO-5AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
  • Power - Max:600 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5AA
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N657S

2N657S

Single Bipolar Transistors Overview

The 2N657S is an NPN silicon planar transistor manufactured by Microchip Technology. It is housed in a TO-5AA through-hole package and designed for medium power applications. The component features a collector-emitter voltage rating of 40 V and a maximum power dissipation of 600 mW. These specifications define its operational limits within electronic circuits requiring fast switching capabilities.

Single Bipolar Transistors Feature Summary

  • Utilizes silicon planar technology for reliable operation
  • Designed for fast switching applications
  • Suitable for medium power requirements

Single Bipolar Transistors Applications

  • Servo amplifier circuits
  • Fast switching applications
  • Medium power transistor stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation as Microchip Technology when sourcing this component. Confirm the specific package type is TO-5AA to ensure mechanical compatibility with existing board layouts. Cross-reference datasheets from authorized distributors to validate the electrical ratings, specifically the 40 V collector-emitter voltage and 600 mW power dissipation limits, against your circuit design requirements.

Single Bipolar Transistors Selection Notes

Select the 2N657S for designs requiring an NPN silicon planar transistor with fast switching characteristics. Ensure the application operates within the 40 V collector-emitter voltage limit and does not exceed the 600 mW power dissipation threshold. The TO-5AA package requires appropriate through-hole mounting infrastructure on the printed circuit board.

Single Bipolar Transistors Part Context

This component belongs to the family of Raytheon-type silicon planar NPN transistors. It is engineered for medium power and fast switching environments. The device serves as a discrete semiconductor solution for amplification and switching tasks where planar technology provides necessary stability and performance consistency.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Generic equivalents may differ in critical parameters such as voltage ratings or switching speeds.

2N657S2N657S
$29.76
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