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The UMW 2N65L is an N-Channel Power MOSFET housed in a TO-252 package. It features a drain-source voltage (Vdss) rating of 600V and a continuous drain current (Id) of 2A at 25°C. The gate-source voltage (Vgs) limit is ±30V. The device exhibits a drain-source on-resistance (Rds(on)) of 4.5Ω when measured at 1A with a 10V gate drive.
Verify the manufacturer marking matches UMW Youtai Semiconductor specifications. Confirm the package type is TO-252 and that the electrical parameters align with the 600V Vdss and 2A Id ratings. Ensure the component is genuine and free from damage before integration into designs.
Select this component for low-current, high-voltage switching tasks where moderate conduction losses are acceptable given the 4.5Ω Rds(on). The TO-252 package suits surface-mount assembly processes. Evaluate thermal management requirements carefully due to the relatively high resistance compared to modern low-Rds(on) alternatives.
This part belongs to the UMW discrete semiconductor portfolio, specifically within their MOSFET lineup. It serves as a standard N-Channel option for industrial and consumer electronics requiring robust voltage handling in a compact surface-mount form factor.
Cross-reference with other 600V N-Channel MOSFETs in TO-252 packages. Verify pinout compatibility and ensure substitute parts meet or exceed the 2A current and 600V voltage requirements.