2N6609

Single Bipolar Transistors Overview

The onsemi 2N6609 is a PNP silicon power transistor designed for high-power linear and switching applications. It features a collector-emitter voltage (VCEO) of 140 V, a collector-base voltage (VCBO) of 160 V, and an emitter-base voltage (VEBO) of 7 V. The device supports a maximum continuous DC collector current of 15 A and a peak collector current of 16 A. With a power dissipation rating of 150 W at 100 V, it offers a minimum DC current gain (hFE) of 15 at 8.0 A and a maximum saturation voltage of 4 V. The transition frequency (fT) is 4 MHz, and it operates within a temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

• High Safe Operating Area (SOA) verified through 100% testing for reliable linear operation.
• Optimized for low distortion complementary designs with high DC current gain and low saturation voltage.
• Completely characterized for linear applications including audio amplifiers and disk head positioners.

Single Bipolar Transistors Applications

• High power audio amplifier circuits
• Disk drive head positioner systems
• Power switching circuits such as relay or solenoid drivers
• DC-DC converters and inverters

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as Central Semiconductor also produces this part number under the same designation. Confirm RoHS compliance status and package type (TO-3) against the required datasheet revision. Check for end-of-life notifications or discontinuance alerts from onsemi, as availability may be restricted. Ensure the component matches the electrical specifications for the intended high-power application before integration.

Single Bipolar Transistors Selection Notes

Select the 2N6609 when a PNP power transistor with high current handling and robust linear operation characteristics is required. Its high safe operating area makes it suitable for demanding analog applications where linearity is critical. Compare its 150 W power dissipation and 15 A current rating against alternative PNP devices to ensure adequate thermal management and performance margins in the target circuit design.

Single Bipolar Transistors Part Context

The 2N6609 is part of a complementary pair with the NPN 2N3773, both utilizing PowerBase technology. Manufactured by onsemi, these transistors are engineered for high-performance power applications requiring precise control and high efficiency. The device is housed in a TO-3 package, facilitating effective heat dissipation for high-power scenarios.

Single Bipolar Transistors Replacement Considerations

The STMicroelectronics MJD2955 is listed as a similar complementary power transistor. Verify pinout compatibility and exact electrical parameters before substitution.