Single Bipolar Transistors 2N6648 product image

2N6648

$90.79
  • Description:TRANS PNP DARL 40V 10A TO-3
  • Series:-

SKU:f8d662b65d5d Category: Brand:

  
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2N6648 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is TRANS PNP DARL 40V 10A TO-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6648

  • Description:TRANS PNP DARL 40V 10A TO-3
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 3V
  • Power - Max:70 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6648

2N6648

Single Bipolar Transistors Overview

The Harris Corporation 2N6648 is a PNP Darlington power silicon transistor designed for high-reliability applications. It features a maximum collector current of 10A and a collector-emitter voltage rating of 40V. The device provides a minimum DC current gain of 1000 at 5A and 3V, with a maximum power dissipation of 70W. It utilizes a TO-204AA (TO-3) metal flange mount package, ensuring robust thermal performance and mechanical stability for demanding electronic circuits.

Single Bipolar Transistors Feature Summary

  • High DC current gain capability suitable for sensitive control applications
  • Robust metal flange mount construction for efficient heat dissipation
  • Designed for military and other high reliability operational environments

Single Bipolar Transistors Applications

  • Military electronic systems requiring high reliability
  • Power switching circuits in industrial equipment
  • High-gain amplifier stages in specialized instrumentation

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source when procuring this component, as production has transitioned from Harris Corporation to entities such as Microsemi and Microchip Technology. Ensure that the datasheet specifications align with your design requirements, particularly regarding the absolute maximum ratings and thermal characteristics. Confirm package compatibility and lead time availability through authorized distributors to maintain supply chain integrity.

Single Bipolar Transistors Selection Notes

Select this component for applications necessitating high current handling and significant voltage gain within a compact metal package. The TO-3 form factor supports direct mounting to heatsinks, simplifying thermal management in high-power designs. Evaluate the trade-off between the 40V voltage limit and the 10A current capacity against alternative transistors if higher voltage isolation is required.

Single Bipolar Transistors Part Context

This part belongs to the family of PNP Darlington power silicon transistors originally developed by Harris Corporation. These devices are engineered for durability in harsh environments, often meeting stringent military standards. The evolution of the product line involves transfers to other semiconductor manufacturers who continue to produce equivalent components under the same designation.

Single Bipolar Transistors Replacement Considerations

Equivalent parts include the 2N6650 series from various manufacturers. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with Microchip or Microsemi datasheets to ensure functional equivalence in critical military or industrial circuits.

2N66482N6648
$90.79
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