SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Vishay Siliconix 2N6660-2 is a military-qualified N-channel enhancement-mode MOSFET housed in a TO-205AD (TO-39) package. It features a drain-source breakdown voltage of 60 V and a gate-source voltage rating of ±20 V. The device exhibits a maximum on-state resistance of 3 Ω at VGS = 10 V and a typical threshold voltage of 1.7 V. Continuous drain current reaches 0.99 A at TC = 25 °C, with a maximum power dissipation of 6.25 W under the same conditions. Switching performance includes turn-on and turn-off times of approximately 8 ns.
Verify that the specific ordering suffix matches the required military specification flow document. Confirm lead termination options and compliance with relevant defense standards before finalizing procurement. Ensure the component meets all environmental and reliability requirements for the intended deployment environment.
Select this component when military qualification and high reliability are mandatory. Consider its low threshold voltage for direct TTL/CMOS interfacing without buffering. Evaluate thermal management needs given the TO-39 package and specified power dissipation limits under various case temperature conditions.
This part belongs to the Vishay Siliconix family of N-channel 60 V MOSFETs, which also includes commercial variants like the 2N6660 and other military grades such as the 2N6660JANTX. All share similar electrical characteristics but differ in manufacturing processes, testing rigor, and packaging specifications according to their respective qualification levels.
Public confirmed substitute part numbers: 2N6660JANTX, 2N6660JANTXV.