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Product Detailed Parameters
- Description：MOSFET N-CH 60V 990MA TO205AD
- Series：-
- Mfr：Vishay Siliconix
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：990mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-205AD (TO-39)
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Vishay Siliconix 2N6660-E3 is a military-qualified N-channel MOSFET featuring a TO-205AD (TO-39) package. It provides a drain-source voltage of 60 V and a continuous drain current of 0.99 A at 25 °C case temperature. The device exhibits a low on-resistance of 1.3 Ω at VGS = 10 V and a threshold voltage of 1.7 V. Dynamic performance includes an input capacitance of 35 pF and switching times of 8 ns. Maximum power dissipation reaches 6.25 W at 25 °C, with an operating junction temperature range from -55 °C to 150 °C.
Feature Summary
- Military qualified for high reliability applications
- Low on-resistance and low threshold voltage for efficient operation
- Fast switching speed with low input and output leakage currents
- Direct logic-level interface capability without buffer requirements
Applications
- High-reliability systems
- Solid-state relays
- Battery-operated systems
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and package variations. Confirm that the TO-205AD form factor matches the target circuit board layout and mounting constraints. Validate military qualification requirements if applicable to the intended deployment environment.
Selection Notes
Select this component when military-grade reliability and direct TTL/CMOS interfacing are required. Ensure the thermal design accommodates the specified junction-to-ambient resistance. Verify that the 60 V drain-source rating and 0.99 A continuous current limits satisfy the peak operational demands of the load circuit.
Part Context
This part belongs to the Vishay Siliconix 2N6660 series of N-channel MOSFETs. The E3 suffix indicates a lead-free variant within the commercial product line. The series encompasses multiple configurations including standard commercial, JANTX, and JANTXV military grades, all sharing the same core silicon die and electrical characteristics.
Replacement Considerations
Consult the manufacturer's flow documents for alternative variants such as the 2N6660-2 or JANTX versions. Cross-reference pinouts and absolute maximum ratings before substituting with other TO-39 packaged MOSFETs.
