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The Vishay Siliconix 2N6660JTXV02 is a military-qualified N-channel power MOSFET housed in a hermetically sealed TO-205AD (TO-39) package. It features a Drain-Source Voltage of 60 V and a maximum Drain-Source On-State Resistance of 3 Ω at VGS = 10 V. The device supports a continuous drain current of 0.99 A at TC = 25 °C and operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead configuration and screening level. The JTXV designation indicates JANTXV military qualification. Confirm that the TO-205AD package matches your mechanical constraints. Ensure compliance with all absolute maximum ratings during design validation.
Select this component when military-grade reliability and hermetic sealing are mandatory requirements. The low on-resistance and fast switching characteristics make it suitable for efficient power control. Verify that the 60 V breakdown voltage meets the system's peak operating conditions. Consider the thermal resistance specifications for adequate heat dissipation in the intended enclosure.
This part belongs to the Vishay Siliconix 2N6660 family of N-channel MOSFETs. The family includes commercial variants like the 2N6660 and screened versions such as the 2N6660JANTX. The 2N6660JTXV02 specifically denotes the JANTXV grade with standard gold leads, offering the highest level of quality assurance within the series.
Public confirmed substitute part numbers: 2N6660JANTX, 2N6660JTXP02.