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Product Detailed Parameters
- Description：MOSFET N-CH 90V 860MA TO39
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：90 V
- Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Military
- Qualification：MIL-PRF-19500
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Vishay Siliconix 2N6661JTXL02 is a military-qualified N-channel power MOSFET featuring a TO-205AD (TO-39) package. It provides a Drain-Source Voltage of 90 V and a continuous drain current of 0.86 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 4 Ω at VGS = 10 V and a low gate threshold voltage of 1.6 V. Switching performance includes turn-on and turn-off times of 6 ns and 8 ns, respectively. Operating junction temperatures range from -55 °C to 150 °C.
Feature Summary
- Military qualification compliant with MIL-PRF-19500 standards for high reliability
- Low input capacitance enabling fast switching speeds without buffer requirements
- Low threshold voltage facilitating direct logic-level interface with TTL/CMOS circuits
- Sealed metal can construction ensuring robustness in critical avionics environments
Applications
- High-reliability military systems
- Solid-state relays
- Direct logic-level interface applications
- Battery-operated systems
Procurement Notes
Verify the ordering suffix JTXL02 corresponds to the JANTX2N6661 variant with solderable leads as defined in the official Vishay datasheet. Confirm that the component meets the specific screening requirements mandated by MIL-PRF-19500 for your intended deployment. Ensure compatibility with the sealed TO-205AD package dimensions for your mechanical assembly.
Selection Notes
Select this component when a hermetically sealed N-channel MOSFET is required for harsh environments. The TO-205AD package offers superior thermal dissipation compared to plastic packages. Consider the 90 V breakdown voltage and 4 Ω on-resistance limits for load matching. Verify that the 0.86 A continuous current rating satisfies the peak operational demands of the circuit design.
Part Context
This part belongs to the Vishay Siliconix family of military-grade discrete components manufactured under DSCC re-qualification. It utilizes TrenchFET technology adapted for ruggedized packaging. The device is designed specifically for avionics and space applications where standard commercial parts would fail due to environmental stress or radiation exposure.
Replacement Considerations
Substitute only with other JANTX2N6661 variants explicitly listed in the datasheet, such as 2N6661JTX02 (standard gold leads). Do not use commercial equivalents like 2N6661 unless military screening is waived. Verify lead finish specifications match the assembly process requirements.
