2N6667

Single Bipolar Transistors Overview

The onsemi 2N6667 is a PNP power bipolar transistor housed in a TO-220AB flange mount package. It features a maximum collector current of 10 A and a collector-emitter voltage rating of 60 V. The device operates within a temperature range of -65 °C to +150 °C, with a maximum power dissipation of 65 W. It has a minimum DC current gain (hFE) of 1000 at specified test conditions.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for high-current switching applications
• Integrated thermal management via metal flange mounting
• High current gain capability for efficient drive requirements

Single Bipolar Transistors Applications

• Power switching circuits
• Motor control systems
• Industrial load drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix, such as G, to confirm lead-free compliance and RoHS status. Confirm the package variant matches the required thermal interface. Check manufacturer notices for discontinuance or lifecycle changes before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a robust PNP transistor with high current handling is required. Ensure the circuit design accommodates the 60 V breakdown voltage and 10 A continuous current limits. Verify that the PCB layout supports the TO-220AB flange mounting style for adequate heat dissipation.

Single Bipolar Transistors Part Context

This part belongs to the family of discrete power transistors manufactured by onsemi. It serves as a replacement for legacy Motorola designs, maintaining compatibility with standard through-hole mounting techniques used in older industrial equipment designs.

Single Bipolar Transistors Replacement Considerations

The 2N6667G is the lead-free variant of this component. Verify pinout compatibility if substituting with other PNP power transistors from different manufacturers.