2N6668

Single Bipolar Transistors Overview

The 2N6668 is a silicon PNP power Darlington transistor manufactured by STMicroelectronics. It features an integrated antiparallel collector-emitter diode and is housed in a TO-220 package. The device supports a maximum collector current of 10 A and a peak collector current of 15 A. Maximum voltage ratings include 80 V for both collector-base (VCBO) and collector-emitter (VCEO), with an emitter-base voltage (VEBO) limit of 5 V. Total power dissipation reaches 65 W at a case temperature of 25 °C or lower, with a maximum operating junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Monolithic Darlington configuration providing high DC current gain
• Integrated antiparallel collector-emitter diode for circuit protection
• Designed for general-purpose switching and amplifier applications

Single Bipolar Transistors Applications

• General purpose switching circuits
• General purpose amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the component matches the specific STMicroelectronics datasheet revision and physical marking codes to ensure authenticity. Confirm that the TO-220 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case resistance values under expected load conditions.

Single Bipolar Transistors Selection Notes

Select this component when high current handling capability and robust switching performance are required in a single-ended configuration. The integrated diode simplifies circuit design by eliminating external components for flyback protection. Consider the thermal constraints and heat sinking requirements associated with the TO-220 package for optimal reliability.

Single Bipolar Transistors Part Context

This part belongs to the family of silicon PNP power Darlington transistors offered by STMicroelectronics. These devices utilize planar base island technology to achieve high linearity and frequency response. The 2N6668 specifically targets applications requiring substantial current drive capabilities within a standard through-hole mounting format.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP Darlington transistors offering similar 10 A current ratings and 80 V voltage limits. Verify pinout compatibility and thermal resistance specifications before substitution.

Single Bipolar Transistors FAQ

What is the function of the internal diode in the 2N6668?

The 2N6668 includes an integrated antiparallel collector-emitter diode, which provides inherent protection against voltage spikes and simplifies circuit design by removing the need for an external freewheeling diode.

How does the 2N6668 handle peak currents?

While the continuous collector current is rated at 10 A, the device can withstand a peak collector current of 15 A for short durations, making it suitable for transient loads.

What is the maximum operating junction temperature?

The maximum operating junction temperature for the 2N6668 is 150 °C, allowing for operation in environments where higher thermal stability is required.