Single Bipolar Transistors 2N6668G product image

2N6668G

  • Description:TRANS PNP DARL 60V 10A TO-220
  • Series:-

SKU:1c8313014f66 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2N6668G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 60V 10A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6668G

  • Description:TRANS PNP DARL 60V 10A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 5V
  • Power - Max:65 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6668G

2N6668G

Single Bipolar Transistors Overview

The onsemi 2N6668G is a PNP power bipolar transistor housed in a TO-220AB package. It features a maximum collector current of 10 A and a collector-emitter voltage rating of 80 V. The device utilizes a Darlington configuration with built-in diode and resistor, offering a minimum DC current gain (hFE) of 1000. Maximum power dissipation is rated at 65 W, with an operating temperature range from -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

  • High current gain capability suitable for switching applications
  • Integrated protection components within the Darlington structure
  • Robust thermal performance for high-power environments

Single Bipolar Transistors Applications

  • Power switching circuits
  • Industrial control systems
  • Motor drive interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'G' against official datasheets to confirm compliance status and packaging details. Ensure the component matches the required pinout and thermal characteristics for the target application. Cross-reference manufacturer documentation for any updates regarding RoHS or REACH directives prior to final procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high gain and robust switching capabilities in a through-hole package. Consider the thermal management requirements given the 65 W dissipation rating. Evaluate the need for the integrated diode and resistor features to simplify circuit design compared to discrete solutions.

Single Bipolar Transistors Part Context

This part belongs to the family of power bipolar transistors designed for general-purpose switching. It offers a balance of high current handling and voltage tolerance in a standard industrial package. The Darlington configuration provides significant amplification, making it suitable for driving loads directly from low-current control signals.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent PNP Darlington transistors with matching voltage and current ratings. Verify pin compatibility and thermal resistance values before implementing any alternative components in existing designs.

2N6668G2N6668G

Click on the inquiry