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2N6668G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 60V 10A TO-220. Review the specifications below when checking this part for your BOM.
The onsemi 2N6668G is a PNP power bipolar transistor housed in a TO-220AB package. It features a maximum collector current of 10 A and a collector-emitter voltage rating of 80 V. The device utilizes a Darlington configuration with built-in diode and resistor, offering a minimum DC current gain (hFE) of 1000. Maximum power dissipation is rated at 65 W, with an operating temperature range from -65 °C to +150 °C.
Verify the specific suffix 'G' against official datasheets to confirm compliance status and packaging details. Ensure the component matches the required pinout and thermal characteristics for the target application. Cross-reference manufacturer documentation for any updates regarding RoHS or REACH directives prior to final procurement decisions.
Select this component for applications requiring high gain and robust switching capabilities in a through-hole package. Consider the thermal management requirements given the 65 W dissipation rating. Evaluate the need for the integrated diode and resistor features to simplify circuit design compared to discrete solutions.
This part belongs to the family of power bipolar transistors designed for general-purpose switching. It offers a balance of high current handling and voltage tolerance in a standard industrial package. The Darlington configuration provides significant amplification, making it suitable for driving loads directly from low-current control signals.
Consult official substitution guides for equivalent PNP Darlington transistors with matching voltage and current ratings. Verify pin compatibility and thermal resistance values before implementing any alternative components in existing designs.
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