2N6715

Single Bipolar Transistors Overview

The onsemi 2N6715 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. It features a collector-emitter voltage rating of 300V and a collector-base voltage of 400V, enabling operation in high-potential circuits. The device supports a maximum continuous DC collector current of 1A and handles up to 8W of power dissipation. Packaged in the TO-126 through-hole format, it operates within a temperature range of -65°C to +175°C. Key electrical characteristics include a minimum DC current gain (hFE) of 20 and a transition frequency (fT) of 10MHz.

Single Bipolar Transistors Feature Summary

• High voltage capability with 300V collector-emitter breakdown
• Robust thermal performance supporting up to 175°C junction temperature
• Standardized TO-126 through-hole mounting configuration

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Linear regulation systems
• Industrial control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix code against official datasheets to confirm exact electrical tolerances and testing criteria. Confirm package dimensions match design constraints. Ensure supply chain sources provide authentic components with traceable documentation. Check for RoHS compliance status if required by project specifications.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand high voltage handling exceeding standard low-voltage transistors. Consider the TO-126 package for ease of manual assembly or heatsink integration. Evaluate thermal management needs given the 8W dissipation limit. Compare current gain requirements against the minimum specified hFE value to ensure adequate drive capability.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose discrete semiconductor category from onsemi. It serves as a reliable solution for medium-power applications requiring high voltage isolation. The TO-126 package provides a balance between power handling and compact footprint compared to larger industrial packages.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in gain bandwidth or thermal resistance. Verify pinout compatibility before substitution.