ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 14A TO204AA
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：210mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-204AA
- Package / Case：TO-204AA, TO-3
Download product information
Overview
The JANTX2N6756 is a military-qualified N-channel silicon metal-oxide semiconductor field-effect transistor (MOSFET) designed for high-reliability applications. It operates in the TO-3 package with two terminals and features a single-element configuration where the case connects to the drain. The device supports a maximum drain current of 14 A, a minimum drain-source breakdown voltage of 100 V, and a maximum on-resistance of 0.18 Ω.
Feature Summary
- Military qualification up to the JANTXV level per MIL-PRF-19500/542 standards
- High-reliability design suitable for demanding operational environments
- Through-hole mounting capability via the TO-3 package
Applications
- High-reliability switching circuits
- Military-grade electronic systems
- Power management modules requiring robust performance
Procurement Notes
Verify that the specific order includes the JANTX suffix to ensure compliance with the required military qualification level. Confirm package integrity upon receipt, as the TO-3 housing requires proper handling. Cross-reference the manufacturer's latest datasheet to validate electrical parameters against current production batches before integration into final assemblies.
Selection Notes
Select this component when a ruggedized N-channel MOSFET with low on-resistance is required for critical infrastructure. The TO-3 form factor provides mechanical stability for high-current paths. Ensure the system design accommodates the specific thermal characteristics associated with this package style and material composition.
Part Context
This part belongs to a family of switching transistors including the 2N6758, 2N6760, and 2N6762. These devices are manufactured by Microsemi to meet stringent military specifications. Commercial versions are available alongside these qualified levels to address varying power ratings and switching speed requirements across different product lines.
Replacement Considerations
Direct substitutes within the same qualification family include the 2N6758, 2N6760, and 2N6762. Verify pinout compatibility and specific electrical limits, such as breakdown voltage and current ratings, which vary between members of this series before implementing any interchange.
