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The JANTX2N6760 is a military-qualified N-channel silicon MOSFET designed for high-reliability applications. It operates in enhancement mode and features a drain-connected case configuration within a TO-3 metal can package. The device supports a minimum drain-source breakdown voltage of 400 V and a maximum continuous drain current of 5.5 A. Its maximum on-resistance is specified at 1.22 Ω, with an operating temperature range extending up to 150 °C.
Verify the specific suffix (JANTX) against procurement requirements to ensure compliance with intended reliability levels. Confirm lead times and availability directly with authorized Microsemi distributors or the manufacturer, as stock levels fluctuate. Ensure the component meets all necessary environmental and quality certifications required for the final assembly.
Select this component when a robust N-channel MOSFET with high voltage tolerance is required for critical systems. The TO-3 package facilitates efficient heat dissipation through flange mounting. Consider the 400 V rating and 5.5 A current capacity to ensure adequate margins for the specific load conditions and thermal environment of the application.
This part belongs to a family of N-channel MOSFETs including the 2N6756, 2N6758, and 2N6762. These devices are offered in JAN, JANTX, and JANTXV qualified levels by Microsemi. The family provides options for various power ratings and switching speeds, catering to diverse high-reliability electronic design needs across multiple industries.
Direct substitutes include other members of the same qualification family, such as the JANTX2N6756, JANTX2N6758, or JANTX2N6762. Verify that the alternative part number matches the required voltage, current, and resistance specifications before implementation.