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Product Detailed Parameters
- Description：MOSFET N-CH 100V 38A TO3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3
- Package / Case：TO-204AE
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Overview
The Microsemi Corporation 2N6764 is a military-qualified N-channel MOSFET designed for high-reliability applications. It operates with a drain-source voltage of 100 V and supports a continuous drain current of 38 A at case temperature. The device features a maximum on-resistance of 65 mΩ at 10 V gate drive and a threshold voltage of 4 V. Qualified per MIL-PRF-19500/543, it utilizes a TO-3 (TO-204AE) through-hole package. Power dissipation reaches 150 W at the case and 4 W in free air, with an operating junction temperature range from -55°C to 150°C.
Feature Summary
- Military qualification compliant with MIL-PRF-19500/543 standards
- Low-profile metal can design suitable for constrained environments
- High thermal performance enabling significant power dissipation
Applications
- Military electronic systems requiring high reliability
- High-reliability industrial switching circuits
- Avionics power management modules
Procurement Notes
Verify the specific suffix (JAN, JANTX, or JANTXV) against the required qualification level, as these denote different manufacturing lot controls and testing rigor under MIL-PRF-19500/543. Confirm RoHS status, noting that commercial versions may differ from military-grade specifications. Ensure the TO-3 package compatibility matches the target circuit board layout and mounting requirements before finalizing procurement.
Selection Notes
Select this component when a robust N-channel MOSFET with 100 V rating and 38 A capacity is needed for ruggedized environments. The TO-3 package provides superior thermal handling compared to smaller surface-mount alternatives. Consider the gate charge and threshold voltage characteristics to ensure compatibility with available drive circuitry within the specified -55°C to 150°C operating range.
Part Context
The 2N6764 belongs to a family of switching transistors including the 2N6766, 2N6768, and 2N6770. These devices share similar structural designs but vary in electrical parameters such as breakdown voltage and on-resistance. All members are available in through-hole packages and offer military qualification options for demanding operational scenarios.
Replacement Considerations
Direct substitutes include other parts within the 2N676x series, such as the 2N6766, provided their specific electrical ratings align with the application requirements. Verify pinout and package dimensions to ensure mechanical interchangeability without redesigning the host system.
