2N6771

Single Bipolar Transistors Overview

The Harris Corporation 2N6771 is a single-element NPN silicon power bipolar transistor housed in a TO-220AB flange mount package. It supports a maximum collector current of 1 A and a collector-emitter breakdown voltage of 300 V. The device features a minimum DC current gain (hFE) of 10 and a maximum collector capacitance of 60 pF. It operates at temperatures up to 150 °C with a maximum power dissipation of 40 W.

Single Bipolar Transistors Feature Summary

• Designed for high-voltage switching applications requiring robust NPN performance
• Utilizes a through-hole TO-220AB flange mount package for effective thermal management
• Constructed from silicon material suitable for general-purpose power electronics

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• High-voltage amplifier stages
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix code (e.g., -6203, -6226, -6255) during procurement, as these designations may indicate variations in testing or packaging within the same electrical family. Confirm that the component matches the original Harris Corporation specifications rather than generic equivalents. Ensure the TO-220AB package dimensions align with your board layout requirements before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a 300 V collector-emitter voltage rating and 1 A continuous current capacity are required. The TO-220AB package facilitates direct mounting to heat sinks for thermal regulation. Consider the 40 W power dissipation limit and ensure adequate cooling solutions are integrated into the system design to maintain operation within the specified 150 °C junction temperature range.

Single Bipolar Transistors Part Context

This part belongs to the Harris Corporation power transistor lineup, which was later absorbed by Intersil and subsequently Renesas Electronics. The 2N6771 series represents standard NPN silicon devices widely used in legacy and modern industrial designs. Variants such as 2N6771-6203 and 2N6771-6255 share identical core electrical characteristics but may differ in manufacturing lot or specific supplier documentation standards.

Single Bipolar Transistors Replacement Considerations

Cross-reference with Intersil or Renesas datasheets for equivalent part numbers like 2N6771-6255. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' TO-220AB NPN transistors rated for 300 V and 1 A.