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Product Detailed Parameters
- Description：MOSFET N-CH 200V 2.25A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：2.25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 1.5A, 0V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 15W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AF Metal Can
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Overview
The Microsemi Corporation 2N6784 is a military-qualified N-channel silicon power MOSFET designed for high-reliability applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 2.25A. The device exhibits a maximum on-resistance of 1.725 ohms and an avalanche energy rating of 20 mJ. Packaged in a hermetically sealed LCC-18 ceramic metal-sealed cofired chip carrier, it operates in enhancement mode with the case connected to the source.
Feature Summary
- Military-grade qualification compliant with MIL-PRF-19500/556 standards
- Hermetically sealed ceramic construction for harsh environments
- Integrated body diode configuration within a single element
Applications
- High-reliability aerospace switching circuits
- Military power management systems
- Harsh environment industrial control interfaces
Procurement Notes
Verify that the specific order suffix matches the required qualification level (JAN, JANTX, or JANTXV) as defined by the manufacturer's datasheet. Confirm package integrity and pinout compatibility with the LCC-18 footprint before integration. Ensure supply chain sources provide valid traceability documentation for military-grade components.
Selection Notes
Select this component when a ruggedized N-channel MOSFET with 200V blocking capability is required. The hermetic seal distinguishes it from commercial equivalents. Evaluate thermal dissipation requirements against the specified ratings. Verify that the 1.725 ohm on-resistance meets the efficiency constraints of the target circuit design.
Part Context
This part belongs to the 2N678x family of switching transistors manufactured by Microsemi. It shares functional similarities with the 2N6782U and 2N6786U but offers distinct voltage and current characteristics suited for specific power switching roles within military and aerospace electronic architectures.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with official Microsemi obsolescence notices for potential alternatives.
