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Product Detailed Parameters
- Description：MOSFET N-CH 100V 6A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AF Metal Can
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Overview
The Microsemi Corporation 2N6788 is a radiation-hardened N-channel power MOSFET designed for high-reliability applications. It features a TO-205AF metal can package with hermetic sealing. Key electrical parameters include a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6A at case temperature. The maximum on-resistance (Rds(on)) is 0.3 ohms, and the device supports a maximum junction temperature of 150°C.
Feature Summary
- Radiation hardened construction suitable for harsh environments
- Hermetically sealed metal can packaging for environmental protection
- Enhancement mode operation with simple drive requirements
Applications
- Spacecraft power distribution systems
- Military switching circuits
- High-reliability motor controls
Procurement Notes
Verify specific ordering suffixes to confirm exact radiation tolerance levels and qualification standards such as MIL-PRF-19500. Confirm package variations like the standard TO-205AF or leadless chip carrier options. Ensure compatibility with existing board layouts due to through-hole mounting requirements. Request detailed datasheets from authorized distributors to validate current manufacturing status and availability.
Selection Notes
Select this component when radiation hardness and hermetic sealing are mandatory for the application environment. Compare the 6A current rating and 100V breakdown against circuit load requirements. Consider the TO-205AF footprint for mechanical integration. Evaluate thermal management needs given the 800mW power dissipation limit in free air.
Part Context
This part belongs to the family of high-reliability N-channel MOSFETs manufactured by Microsemi. It shares similar electrical characteristics with other devices in the series but is distinguished by its specific radiation hardening and hermetic packaging options intended for aerospace and defense sectors.
Replacement Considerations
The International Rectifier IRFE120 is documented as a close replacement offering surface mount LCC-18 packaging. Verify pinout compatibility and ensure the substitute meets the required radiation hardness specifications for the target application.
