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Product Detailed Parameters
- Description：MOSFET N-CH 200V 3.5A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 2.25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AF Metal Can
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Overview
The Microsemi Corporation 2N6790 is a rugged N-channel power MOSFET designed for demanding environments. It features a 200V drain-source breakdown voltage and supports a continuous drain current of 3.5A. The device exhibits a maximum on-resistance of 0.8 ohms and can handle a pulsed drain current of up to 14A. Packaged in the TO-205AF (TO-39) hermetically sealed metal case, it operates within an extended temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Hermetically sealed metal package construction ensures long-term reliability in harsh conditions
- High avalanche energy capability provides robustness against transient electrical stress
- Enhancement mode operation with built-in diode configuration simplifies circuit design
Applications
- Military aerospace power switching systems
- Rugged industrial motor control applications
- High-reliability DC-DC converter topologies
Procurement Notes
Verify the specific qualification level suffix (e.g., JAN, JANTX, JANTXV) required for your application, as performance parameters vary by grade. Confirm that the TO-205AF package dimensions match your board layout constraints. Ensure sourcing channels provide traceable documentation for military-grade components to meet compliance standards.
Selection Notes
Select this component when high voltage isolation and thermal stability are critical. The low on-resistance minimizes conduction losses during continuous operation. Consider the pulse current rating for startup or fault conditions. Verify that the gate drive requirements align with the enhancement mode threshold characteristics for efficient switching.
Part Context
This part belongs to the 2N6790 family of power MOSFETs manufactured under MIL-PRF-19500/555 specifications. It is engineered for superior reliability compared to commercial equivalents. The family includes variants with different radiation hardness and parameter tolerances to suit various defense and space missions.
Replacement Considerations
Direct substitutes include Semicoa JANTX2N6790 and Vishay JAN2N6790. These parts share identical pinouts and core electrical specifications but may differ in specific qualification levels or packaging details. Verify compatibility before implementation.
