2N6792TX

Overview

The 2N6792TX is a radiation-hardened N-channel silicon power MOSFET manufactured by Harris Corporation. It features a TO-205AF (TO-39) flange mount package with the case connected to the drain. Key electrical parameters include a drain-source breakdown voltage of 400 V, a continuous drain current of 2 A at case temperature, and a maximum on-resistance of 1.8 Ω. The device supports a pulse drain current of up to 7 A and operates at junction temperatures up to 150 °C. It incorporates a built-in diode and exhibits low leakage current characteristics suitable for high-voltage switching environments.

Feature Summary

• Radiation hardened construction for reliable operation in harsh environments
• Flange mount metal package with drain-connected case for efficient thermal dissipation
• Integrated body diode for simplified circuit design
• Low leakage current and fast switching capabilities

Applications

• High-voltage switching applications
• Radiation-tolerant electronic systems
• Power conversion circuits requiring robust semiconductor devices

Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Harris Corporation and later associated with L3Harris or Intersil/Renesas lines. Confirm the specific datasheet version matches the required electrical tolerances. Ensure the package type corresponds to TO-205AF/TO-39 standards. Request certification documents if radiation hardening verification is critical for the intended application environment.

Selection Notes

Select this component when high voltage isolation and radiation resistance are primary requirements. The 400V rating and 2A current capacity define its operational limits. Consider the thermal management needs provided by the flange mount design. Compare against other N-channel MOSFETs if lower voltage or higher current densities are needed, noting that this part prioritizes ruggedness over raw power handling.

Part Context

This component belongs to the family of radiation-hardened power field-effect transistors designed for military and aerospace reliability. It utilizes enhancement mode technology within a metal-oxide semiconductor structure. The TO-205AF package provides mechanical stability and thermal conductivity essential for space or high-radiation industrial applications where standard commercial components would fail prematurely.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any direct replacements by matching the TO-205AF footprint, 400V rating, and radiation hardness specifications.