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Product Detailed Parameters
- Description：MOSFET N-CH 200V 5.5A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AF Metal Can
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Overview
The 2N6798 is a radiation-hardened, N-channel enhancement mode silicon power MOSFET designed for high-reliability applications. It features a hermetically sealed TO-205AF metal can package with the case connected to the drain terminal. The device supports a minimum drain-source breakdown voltage of 200 V and a maximum continuous drain current of 5.5 A. Key electrical characteristics include a maximum on-resistance of 0.4 Ω and a maximum feedback capacitance of 150 pF. It operates in enhancement mode with a maximum junction temperature of 150 °C.
Feature Summary
- Radiation hardened construction suitable for demanding environments
- Hermetically sealed cylindrical metal can packaging
- Single configuration with an integrated body diode
Applications
- Military switching power supplies
- Motor control systems
- Inverter circuits
- Chopper circuits
- High energy pulse circuits
Procurement Notes
Verify that the specific ordering suffix matches the required qualification level, as military variants are qualified per MIL-PRF-19500/557. Confirm the presence of the radiation-hardened designation and the correct package style during procurement. Ensure the component meets the necessary environmental specifications for the intended deployment scenario.
Selection Notes
Select this component when a ruggedized N-channel MOSFET with low on-resistance is required for space-constrained designs. The TO-205AF package provides a robust mechanical interface for high-power dissipation. Consider the built-in diode functionality if synchronous rectification or freewheeling paths are needed within the circuit topology.
Part Context
This part belongs to a family of N-channel enhancement mode MOSFETs available in various voltage ratings including 100 V, 200 V, 400 V, and 500 V. The 2N6798 specifically addresses the 200 V rating category. These devices utilize advanced MOSFET technology to deliver high performance while maintaining small physical dimensions suitable for strict size constraints.
Replacement Considerations
Substitutes must be verified against MIL-PRF-19500/557 qualifications. Check for identical pinout compatibility in the TO-205AF package. Ensure replacement parts maintain equivalent radiation hardness levels and thermal management capabilities.
