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Product Detailed Parameters
- Description：MOSFET N-CH 400V 3A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AF Metal Can
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Overview
The Microsemi Corporation 2N6800 is a radiation-hardened, single N-channel silicon power MOSFET designed for high-reliability applications. It features a minimum drain-source breakdown voltage of 400 V and supports a maximum continuous drain current of 3 A. The device exhibits a maximum on-resistance of 1 Ω in enhancement mode operation. It utilizes the TO-205AF metal can package with the case connected to the drain terminal. The component is qualified under MIL-PRF-19500 standards and operates at junction temperatures up to 150 °C.
Feature Summary
- Radiation hardened construction suitable for space environments
- Single N-channel enhancement mode configuration
- High-voltage capability with integrated built-in diode
Applications
- Spacecraft power distribution systems
- Satellite switching circuits
- Military-grade power management modules
Procurement Notes
Verify that the specific part number suffix matches the required qualification level, as military variants often carry distinct prefixes or suffixes indicating testing standards. Confirm radiation hardness specifications against mission requirements. Ensure the TO-205AF package type aligns with thermal and mechanical constraints. Check for RoHS compliance status if applicable to the assembly process.
Selection Notes
Select this component when high voltage isolation and radiation tolerance are critical. The 400 V rating provides significant headroom for transient spikes. The 3 A current capacity suits moderate load switching. Consider the TO-205AF package for hermetic sealing needs. Evaluate thermal dissipation requirements given the 1 Ω on-resistance at the target operating current.
Part Context
This device belongs to the 2N6800 series of radiation-hardened power MOSFETs produced by Microsemi (now Microchip). These components are engineered for harsh environments where standard commercial parts would fail due to ionizing radiation effects. The series typically includes complementary P-channel variants and different voltage ratings within the same ruggedized family structure.
Replacement Considerations
Direct replacements must match the TO-205AF hermetic package and radiation hardness specifications. Verify equivalent breakdown voltage and current ratings from other military-qualified suppliers.
