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The Microsemi Corporation 2N6800U is a military-qualified N-channel MOSFET designed for high-reliability applications. It features a Drain-Source Voltage (VDS) of 400 V and a continuous Drain Current (ID1) of 3.0 A at a case temperature of +25 °C. The device operates within a junction temperature range of -55 °C to +150 °C. It utilizes a U-18 LCC ceramic package with gold-plated terminals and a Kovar lid, offering a surface-mount equivalent to the JEDEC registered 2N6798 series.
Verify the specific reliability level required (JAN, JANTX, or JANTXV) as this determines the part suffix and qualification standard. Confirm that the U-18 LCC package dimensions match the target PCB layout. Ensure the procurement channel provides traceable documentation consistent with the selected military grade.
Select the 2N6800U when a 400 V drain-source voltage rating is necessary. Consider the thermal resistance and power dissipation limits relative to the expected case temperature. Evaluate the switching characteristics against the circuit's drive impedance and load current requirements to ensure adequate performance margins.
This component belongs to a family of switching transistors including the 2N6796U, 2N6798U, and 2N6802U. While other parts in the series offer different voltage and current ratings, the 2N6800U specifically targets applications requiring a 400 V breakdown voltage. The family shares the same U-18 LCC package and manufacturing process.
The datasheet identifies the 2N6798U as a related part number within the same family. Verify if the lower voltage rating of the 2N6798U meets the application requirements before considering it as a substitute.