2N6800U

2N6800U

  • Description:MOSFET N-CH 400V 3A 18ULCC
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk

SKU:0d09aff5c746 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 400V 3A 18ULCC
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.75 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):800mW (Ta), 25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:18-ULCC (9.14x7.49)
  • Package / Case:18-CLCC

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2N6800U

Overview

The Microsemi Corporation 2N6800U is a military-qualified N-channel MOSFET designed for high-reliability applications. It features a Drain-Source Voltage (VDS) of 400 V and a continuous Drain Current (ID1) of 3.0 A at a case temperature of +25 °C. The device operates within a junction temperature range of -55 °C to +150 °C. It utilizes a U-18 LCC ceramic package with gold-plated terminals and a Kovar lid, offering a surface-mount equivalent to the JEDEC registered 2N6798 series.

Feature Summary

  • Qualified per MIL-PRF-19500/557 for JAN, JANTX, and JANTXV reliability levels.
  • Surface mount design enables mounting in crowded areas.
  • RoHS compliant by design.

Applications

  • Military applications
  • High-reliability applications

Procurement Notes

Verify the specific reliability level required (JAN, JANTX, or JANTXV) as this determines the part suffix and qualification standard. Confirm that the U-18 LCC package dimensions match the target PCB layout. Ensure the procurement channel provides traceable documentation consistent with the selected military grade.

Selection Notes

Select the 2N6800U when a 400 V drain-source voltage rating is necessary. Consider the thermal resistance and power dissipation limits relative to the expected case temperature. Evaluate the switching characteristics against the circuit's drive impedance and load current requirements to ensure adequate performance margins.

Part Context

This component belongs to a family of switching transistors including the 2N6796U, 2N6798U, and 2N6802U. While other parts in the series offer different voltage and current ratings, the 2N6800U specifically targets applications requiring a 400 V breakdown voltage. The family shares the same U-18 LCC package and manufacturing process.

Replacement Considerations

The datasheet identifies the 2N6798U as a related part number within the same family. Verify if the lower voltage rating of the 2N6798U meets the application requirements before considering it as a substitute.

2N6800U2N6800U

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