2N6849

Description：MOSFET P-CH 100V 6.5A TO39
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:e3031bd933e9 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 100V 6.5A TO39
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：800mW (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AF Metal Can

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2N6849

Overview

The Microsemi Corporation 2N6849 is a P-channel power MOSFET designed for high-reliability applications. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 6.5 A at case temperature. The device operates with a maximum gate-source voltage (Vgs) of ±20 V and exhibits a maximum on-resistance (Rds(on)) of 320 mΩ at 10 V gate drive. Power dissipation reaches 800 mW in free air and 25 W when mounted to a case. It utilizes a TO-205AF metal can package, supports junction temperatures from -55°C to 150°C, and meets MIL-PRF-19500/564 military qualification standards.

Feature Summary

Military-grade reliability certified under MIL-PRF-19500/564 specifications
Robust thermal management capability with 25 W power dissipation at case temperature
High-voltage handling with 100 V drain-source breakdown rating
Durable metal can construction suitable for harsh environments

Applications

Military aerospace power switching systems
Harsh environment industrial control circuits
High-reliability DC-DC converter topologies
Aviation ground support equipment power stages

Procurement Notes

Verify the specific suffix designation against the original design specification to ensure compatibility with existing circuit requirements. Confirm that the procurement source provides valid traceability documentation required for military or aerospace projects. Check the component status carefully as availability may be limited due to end-of-life considerations. Ensure the supplier adheres to strict quality assurance protocols mandated by the relevant defense standards.

Selection Notes

Select this component when a ruggedized P-channel MOSFET is required for critical systems operating in extreme temperatures. The TO-205AF package necessitates through-hole mounting and adequate heatsinking infrastructure. Evaluate the 320 mΩ on-resistance against system efficiency targets at the intended load current. Consider the 6.5 A current limit relative to peak surge demands within the application circuit.

Part Context

This part belongs to the 2N6849 family of P-channel enhancement mode MOSFETs manufactured by Microsemi Corporation. It is specifically qualified for military use, distinguishing it from commercial variants. The component shares functional similarities with other TO-205AF packaged transistors but offers distinct voltage and current ratings tailored for specialized defense electronics.