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Product Detailed Parameters
- Description：MOSFET N-CH 100V 1.69A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：2.6Ohm @ 1.07A, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：8.33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AF Metal Can
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Overview
The JAN2N6901 is a single N-channel MOSFET manufactured by Microsemi, designed for military applications under the MIL-PRF-19500/570 specification. It features a TO-205AF package and operates with a drain-source voltage of 100V and a continuous drain current of 1.69A at 25°C. The device has a maximum power dissipation of 8.33W (TC) and functions within a temperature range of -55°C to 150°C. Key electrical parameters include a gate-source voltage of ±10V, a threshold voltage of 2V @ 1mA, and an on-resistance of 1.4Ω @ 1.07A, 5V.
Feature Summary
- Military-grade construction compliant with MIL-PRF-19500/570 standards
- N-channel enhancement mode metal oxide semiconductor technology
- High thermal stability suitable for extreme operating environments
Applications
- Military electronic systems requiring ruggedized discrete semiconductors
- High-reliability switching circuits in aerospace equipment
- Harsh environment industrial control modules
Procurement Notes
Verify that the component matches the JAN2N6901 designation and Microsemi origin. Confirm compliance with MIL-PRF-19500/570 specifications. Check for obsolete status and ensure availability through authorized channels. Validate package type as TO-205AF and review datasheet for specific lot traceability requirements.
Selection Notes
Select this component for applications demanding high reliability and radiation hardness typical of military specifications. Ensure the system design accommodates the 100V drain-source voltage and 1.69A current limits. Consider the TO-205AF package constraints for thermal management and mounting. Verify that the 1.4Ω on-resistance meets the efficiency requirements of the target circuit.
Part Context
The JAN2N6901 belongs to the family of military-grade discrete transistors produced by Microsemi. It is part of the broader portfolio of components adhering to strict military quality standards. This series supports critical infrastructure and defense applications where standard commercial parts are insufficient due to environmental or reliability demands.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains MIL-PRF-19500/570 compliance and identical pinout configuration. Verify that alternative devices meet the same voltage, current, and thermal specifications.
