2N699 PBFREE

Single Bipolar Transistors Overview

The 2N699 PBFREE is a single NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 80 V and a collector-base voltage of 120 V, with an emitter-base voltage rating of 7 V. The device supports a maximum DC collector current of 150 mA and dissipates up to 2 W of power. Key electrical characteristics include a gain-bandwidth product of 60 MHz and a collector-emitter saturation voltage of 1.3 V. It operates within a temperature range of -65°C to +175°C and utilizes a through-hole mounting style.

Single Bipolar Transistors Feature Summary

• Single NPN configuration designed for general-purpose switching and amplification applications
• High thermal stability supporting operation up to +175°C junction temperature
• Through-hole construction suitable for standard PCB mounting techniques

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-power amplification stages
• Signal processing applications requiring moderate voltage ratings

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Central Semiconductor before procurement. Confirm that the PBFREE suffix indicates lead-free plating as required by project specifications. Ensure the through-hole package dimensions match the target footprint. Check for any recent engineering change notices that may affect pinout or material composition.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN BJT with 80V collector-emitter breakdown is required. The 150mA current rating suits low-to-medium power tasks. Consider the 60MHz transition frequency for signal integrity in moderate-speed circuits. Verify that the 2W power dissipation capability aligns with the thermal management design of the final assembly.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor (BJT) category. It is a through-hole device intended for robust electronic assemblies. The manufacturer provides ECAD models and detailed specification sheets to support integration into larger circuit designs.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference guides from Central Semiconductor for verified alternatives.