2N699 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N699 TIN/LEAD is a silicon NPN single bipolar junction transistor designed for through-hole mounting. It features a maximum collector-emitter voltage of 80 V, a collector-base voltage of 120 V, and an emitter-base voltage of 7 V. The device supports a maximum DC collector current of 150 mA with a power dissipation rating of 2 W. Key electrical characteristics include a collector-emitter saturation voltage of 1.3 V and a gain-bandwidth product of 60 MHz. It operates within a temperature range of -65°C to +175°C.

Single Bipolar Transistors Feature Summary

• Utilizes silicon technology for robust performance across wide temperature ranges.
• Provides high collector-base breakdown voltage suitable for demanding switching applications.
• Features a low collector-emitter saturation voltage to minimize conduction losses.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages requiring moderate frequency response
• Industrial control systems operating in extreme temperatures

Single Bipolar Transistors Procurement Notes

Verify the specific plating configuration required for the application. The manufacturer distinguishes between lead-free and tin/lead variants using distinct ordering suffixes. Confirm that the requested version matches the exact part number designation to ensure compliance with material specifications and availability constraints.

Single Bipolar Transistors Selection Notes

Select this component when a through-hole NPN transistor with a 150 mA current capacity and 80 V voltage rating is required. The 60 MHz transition frequency makes it suitable for general-purpose amplification. Ensure the thermal management design accommodates the 2 W power dissipation limit at the intended operating temperature.

Single Bipolar Transistors Part Context

This component belongs to the standard discrete bipolar transistor category from Central Semiconductor. It shares the core electrical specifications of the 2N699 series but differs in terminal finish. The tin/lead variant offers specific solderability characteristics compared to the lead-free alternative.

Single Bipolar Transistors Replacement Considerations

Direct functional equivalents include other NPN transistors with matching 80V VCEO and 150mA IC ratings. Verify pinout compatibility and package dimensions before substitution. Consult official datasheets for parameter tolerances.