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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT),Tape & Box (TB)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Overview
The onsemi 2N7000-D75Z is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a TO-92 package with lead-free and halogen-free construction. The device provides a drain-source voltage of 60 V, continuous drain current of 200 mA, and maximum power dissipation of 400 mW. Electrical characteristics include a gate threshold voltage range of 0.8 V to 3 V at 1 mA, static drain-source on-resistance up to 5 Ω at 10 V gate drive, and input capacitance typically 20 pF.
Feature Summary
- High density cell design for low on-state resistance
- Voltage controlled small signal switch
- ESD protection level exceeding 100 V HBM and 2 kV CDM
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Low-voltage low-current switching applications
Procurement Notes
Verify the specific D75Z suffix indicates tape and reel packaging containing 2000 units per reel. Confirm the component is Pb-Free and Halogen Free as stated in the ordering information. Ensure the TO-92 case outline matches the required mechanical constraints for the target assembly process.
Selection Notes
Select this component for general-purpose switching where low-voltage operation and small signal handling are required. Consider the thermal resistance and safe operating area limits when designing for higher ambient temperatures or pulsed loads. Verify that the logic level gate drive requirements align with the system's available control voltages.
Part Context
This part belongs to the 2N7000 series of N-channel enhancement mode FETs produced by onsemi. It utilizes proprietary DMOS technology designed to minimize on-state resistance while ensuring rugged performance. The device is intended for use in compact electronic circuits requiring reliable switching capabilities.
Replacement Considerations
Direct substitutes within the same family include the 2N7000-D74Z (Ammo) and 2N7000-D26Z (Tape and Reel). Cross-manufacturer equivalents such as the 2N7002 exist but differ in package type and may require layout adjustments.
